g eneral d escription the IRFZ44 is n-channel mos field effect transistor designed for high current switching applications. rugged e as capability and ultra low r ds(on) is suitable for pwm. features v ds = 6 0v i d = 45 a@ v gs = 10 v r ds(on) < 7.5 m @ v gs = 10 v u ltra l ow on-resistance h igh uis and uis 100% t est application hard switched and high frequency circuits uninterruptible power supply table 1. a bsolute maximum r atings (ta=25 ) symbol parameter value unit v ds drain-source voltage ( v gs= 0v 6 0 v v gs gate-source voltage ( v ds= 0v) 25 v i d (dc) drain current (dc) at tc=25 45 a i d (dc) drain current (dc) at tc=100 40 a i dm (pluse) drain current-continuous@ current-pulsed (note 1 ) 200 a dv/dt peak d iode r ecovery v oltage 30 v /n s p d maximum power dissipation (tc=25 ) 130 w derating f actor 1.9 w/ e as single p ulse a valanche e nergy (note 2 ) 360 mj t j ,t stg operating junction and storage temperature range -55 to 175 note s 1. repetitive rating: pulse width limited by maximum junction temperature 2. e as condition : t j =25 , v dd =33v,v g =10v,i d =48.5a schematic d iagram v dss = 6 0 v i dss = 45 a r ds(on ) = 6.0 m ? to-251 t op v iew g d s ? IRFZ44 pb free plating product IRFZ44 pb 45 ampere typical n-channel trench power mosfets ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 rev.02 cs 50 n 06 cass semiconductor co., ltd http://www.casssemi.com primary version - 1 - n-channel trench power mosfet g eneral d escription the cs50 n 06 is n-channel mos field effect transistor designed for high current switching applications. rugged e as capability and ultra low r ds(on) is suitable for pwm. features v ds = 6 0v i d = 50 a@ v gs = 10 v r ds(on) < 7.5 m @ v gs = 10 v u ltra l ow on-resistance h igh uis and uis 100% t est application hard switched and high frequency circuits uninterruptible power supply p ackage m arking a nd o rdering i nformation device marking device device package reel size tape width quantity cs50 n 06 50 n 06 t o-220 - - - table 1. a bsolute maximum r atings (ta=25 ) symbol parameter value unit v ds drain-source voltage ( v gs= 0v 6 0 v v gs gate-source voltage ( v ds= 0v) 25 v i d (dc) drain current (dc) at tc=25 50 a i d (dc) drain current (dc) at tc=100 45 a i dm (pluse) drain current-continuous@ current-pulsed (note 1 ) 200 a dv/dt peak d iode r ecovery v oltage 30 v /n s p d maximum power dissipation (tc=25 ) 130 w derating f actor 1.9 w/ e as single p ulse a valanche e nergy (note 2 ) 360 mj t j ,t stg operating junction and storage temperature range -55 to 175 note s 1. repetitive rating: pulse width limited by maximum junction temperature 2. e as condition : t j =25 , v dd =33v,v g =10v,i d =48.5a schematic d iagram v dss = 6 0 v i dss = 50 a r ds(on ) = 6.0 m ? t o-220 t op v iew
table 2. t hermal characteristic symbol parameter value unit r ? jc thermal resistance,junction-to- case 0.6 /w table 3. e lectrical characteristics (ta=25 unless otherwise noted) symbol parameter condition s min typ max unit on/ o ff s tates bv dss drain-source breakdown voltage v gs =0v i d =250 a 60 v i dss zero gate voltage drain current (tc=25 ) v ds = 6 0 v,v gs =0v 1 a i dss zero gate voltage drain current (tc=125 ) v ds = 6 0 v,v gs =0v 1 a i gss gate-body leakage current v gs = 25 v,v ds =0v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d =250 a 2 4 v r ds(on) drain-source on-state resistance v gs = 10 v, i d =4 0 a 6.0 7.5 m dynamic characteristics g fs forward transconductance v ds = 10 v,i d = 40 a 2 7 s c iss input capacitance v ds = 25 v,v gs =0v, f =1.0mhz 3967 p f c oss output capacitance 848 p f c rss reverse transfer capacitance 4 75 p f q g total gate charge v ds = 30 v,i d = 30 a, v gs = 10 v 67 nc q gs gate-source charge 13 nc q gd gate-drain charge 18 nc s witching t imes t d(on) turn-on delay time v dd = 3 0v,i d = 2 a ,r l =15 v gs = 10 v,r g = 2.5 11 ns t r turn-on rise time 13 ns t d(off) turn-off delay time 22 ns t f turn-off fall time 27 ns source- d rain d iode characteristics i sd source- d rain c urrent(body diode) 50 a i sdm pulsed source- d rain c urrent(body diode) 200 a v sd forward o n v oltage (note 1 ) t j =25 ,i sd =40a,v gs =0v 0.8 0.95 v t rr reverse recovery time (note 1 ) t j =25 ,i f =75a di/dt=100a/ s 40 ns q rr reverse recovery charge (note 1 ) 81 nc t on forward turn-on time intrinsic turn-on time is negligible(turn-on is dominated by l s +l d ) note s 1 . pulse test: pulse width 300 s, duty cycle 1.5 % , r g =25 , starting t j =25 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 rev.02 70 ? IRFZ44 cs 50 n 06 cass semiconductor co., ltd http://www.casssemi.com primary version - 2 - table 2. t hermal characteristic symbol parameter value unit r ? jc thermal resistance,junction-to- case 0.6 /w table 3. e lectrical characteristics (ta=25 unless otherwise noted) symbol parameter condition s min typ max unit on/ o ff s tates bv dss drain-source breakdown voltage v gs =0v i d =250 a 60 v i dss zero gate voltage drain current (tc=25 ) v ds = 6 0 v,v gs =0v 1 a i dss zero gate voltage drain current (tc=125 ) v ds = 6 0 v,v gs =0v 1 a i gss gate-body leakage current v gs = 25 v,v ds =0v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d =250 a 2 4 v r ds(on) drain-source on-state resistance v gs = 10 v, i d =4 0 a 6.0 7.5 m dynamic characteristics g fs forward transconductance v ds = 10 v,i d = 40 a 2 7 s c iss input capacitance v ds = 25 v,v gs =0v, f =1.0mhz 3967 p f c oss output capacitance 848 p f c rss reverse transfer capacitance 4 75 p f q g total gate charge v ds = 30 v,i d = 30 a, v gs = 10 v 67 nc q gs gate-source charge 13 nc q gd gate-drain charge 18 nc s witching t imes t d(on) turn-on delay time v dd = 3 0v,i d = 2 a ,r l =15 v gs = 10 v,r g = 2.5 11 ns t r turn-on rise time 13 ns t d(off) turn-off delay time 22 ns t f turn-off fall time 27 ns source- d rain d iode characteristics i sd source- d rain c urrent(body diode) 50 a i sdm pulsed source- d rain c urrent(body diode) 200 a v sd forward o n v oltage (note 1 ) t j =25 ,i sd =40a,v gs =0v 0.8 0.95 v t rr reverse recovery time (note 1 ) t j =25 ,i f =75a di/dt=100a/ s 40 ns q rr reverse recovery charge (note 1 ) 81 nc t on forward turn-on time intrinsic turn-on time is negligible(turn-on is dominated by l s +l d ) note s 1 . pulse test: pulse width 300 s, duty cycle 1.5 % , r g =25 , starting t j =25
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